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Although nanoporous Pt film has been shown to be an effective catalyst for polymer electrolyte membrane (PEM) fuel cells, the maximum power density of the cell is limited by the optimal film thickness. When the Pt film thickness exceeds the optimal value, regions with good gas transport (the side near the gas diffusion layer (GDL)) separate from regions with good proton transport (the side near the PEM), so the current density and the power density drop with increasing film thickness. Here we demonstrate that this obstacle can be overcome by laser micro-machining the GDL. The picosecond laser fabricates grooves on the GDL surface to greatly increase the effective surface area for Pt deposition, thereby reducing the local Pt film thickness. A nearly two-fold increase in the power density is achieved by using laser micro-machined periodic grooves of 20 μm depth, reaching a 0.6-V power density of 853 mW cm⁻² and a maximum power density of 1.2 W cm⁻² with a cathode Pt loading of 200 μg cm⁻². The results also indicate that further enhancement may be achieved by increasing the surface modulation depth/period ratio and by implementing a better way to fill the grooves with polymer electrolyte.

Solid-state lasers with pulse duration of 10 ps and radiation wavelength of 1064 nm were used to investigate the laser ablation efficiency dependence on processing parameters: laser fluence (pulse energy and beam spot size), beam scanning speed, pulse repetition rate, and scanned line (hatch) distance for the copper sample. Utilising a 40 W power laser, the highest ablation efficiency of 2.5 µm³/µJ and the ablation rate of 100 µm³/µs with the smallest surface roughness of 0.2 µm was obtained. Three-dimensional (3D) fabrication using a galvanometer scanner and layer-by-layer removal technique with optimal parameters defined for efficient ablation were demonstrated at a rate of 6 mm³/min. Combination of high material removal rate with excellent quality and complex 3D structure formation is in a high interest for mimicking bio-inspired surfaces, micro-mould fabrication and decorative applications.

Ultra-short laser pulses are frequently used for material removal (ablation) in science, technology and medicine. However, the laser energy is often used inefficiently, thus, leading to low ablation rates. For the efficient ablation of a rectangular shaped cavity, the numerous process parameters such as scanning speed, distance between scanned lines, and spot size on the sample, have to be optimized. Therefore, finding the optimal set of process parameters is always a time-demanding and challenging task. Clear theoretical understanding of the influence of the process parameters on the material removal rate can improve the efficiency of laser energy utilization and enhance the ablation rate. In this work, a new model of rectangular cavity ablation is introduced. The model takes into account the decrease in ablation threshold, as well as saturation of the ablation depth with increasing number of pulses per spot. Scanning electron microscopy and the stylus profilometry were employed to characterize the ablated depth and evaluate the material removal rate. The numerical modelling showed a good agreement with the experimental results. High speed mimicking of bio-inspired functional surfaces by laser irradiation has been demonstrated.

We present a compact diffractive silicon-based multilevel phase Fresnel lens (MPFL) with up to 50 mm in diameter and a numerical aperture up to 0.86 designed and fabricated for compact terahertz (THz) imaging systems. The laser direct writing technology based on a picosecond laser was used to fabricate diffractive optics on silicon with a different number of phase quantization levels P reaching an almost kinoform spherical surface needed for efficient THz beam focusing. Focusing performance was investigated by measuring Gaussian beam intensity distribution in the focal plane and along the optical axis of the lens. The beam waist and the focal depth for each MPFL were evaluated. The influence of the phase quantization number on the focused beam amplitude was estimated, and the power transmission efficiency reaching more than 90% was revealed. The THz imaging of less than 1 mm using a robust 50 mm diameter multilevel THz lens was achieved and demonstrated at 580 GHz frequency.

Fibonacci or bifocal terahertz (THz) imaging is demonstrated experimentally employing a silicon diffractive zone plate in continuous wave mode. Images simultaneously recorded in two different planes are exhibited at 0.6 THz frequency with the spatial resolution of wavelength. Multifocus imaging operation of the Fibonacci lens is compared with a performance of the conventional silicon phase zone plate. Spatial profiles and focal depth features are discussed varying the frequency from 0.3 to 0.6 THz. Good agreement between experimental results and simulation data is revealed.

In this paper, we investigate the laser processing of the CIGS thin-film solar cells in the case of the high-speed regime. The modern ultra-short pulsed laser was used exhibiting the pulse repetition rate of 1 MHz. Two main P3 scribing approaches were investigated – ablation of the full layer stack to expose the molybdenum back-contact, and removal of the front-contact only. The scribe quality was evaluated by SEM together with EDS spectrometer followed by electrical measurements. We also modelled the electrical behavior of a device at the mini-module scale taking into account the laser-induced damage. We demonstrated, that high-speed process at high laser pulse repetition rate induced thermal damage to the cell. However, the top-contact layer lift-off processing enabled us to reach 1.7 m/s scribing speed with a minimal device degradation. Also, we demonstrated the P3 processing in the ultra-high speed regime, where the scribing speed of 50 m/s was obtained. Finally, selected laser processes were tested in the case of mini-module scribing. Overall, we conclude, that the top-contact layer lift-off processing is the only reliable solution for high-speed P3 laser scribing, which can be implemented in the future terawatt-scale photovoltaic production facilities.

Medical tools and other devices made of stainless steel (SS) require laser markings for unique device identification (UDI). These markings need to be corrosion resistant in order to withstand numerous autoclave cycles. EKSPLA with FTMC has developed a picosecond laser marking system – for reliable UDI marks on surgical and spring grade of stainless steel for corrosion resistive applications.

Pulsed laser melting in liquid (PLML) has emerged as a facile approach to synthesize submicron spheres (SMSs) for various applications. Typically lasers with long pulse durations in the nanosecond regime are used. However, recent findings show that during melting the energy absorbed by the particle will be dissipated promptly after laser-matter interaction following the temperature decrease within tens of nanoseconds and hence limiting the efficiency of longer pulse widths. Here, the feasibility to utilize a picosecond laser to synthesize Ge SMSs (200~1000 nm in diameter) is demonstrated by irradiating polydisperse Ge powders in water and isopropanol. Through analyzing the educt size dependent SMSs formation mechanism, we find that Ge powders (200~1000 nm) are directly transformed into SMSs during PLML via reshaping, while comparatively larger powders (1000~2000 nm) are split into daughter SMSs via liquid droplet bisection. Furthermore, the contribution of powders larger than 2000 nm and smaller than 200 nm to form SMSs is discussed. This work shows that compared to nanosecond lasers, picosecond lasers are also suitable to produce SMSs if the pulse duration is longer than the material electron-phonon coupling period to allow thermal relaxation.

Zone plates with integrated band-pass filters and binary Fresnel lenses designed for the THz spectral range were fabricated by direct laser ablation in metal films and the silicon substrate. Results on the process performance and quality of the products are reviewed. The focusing performance was measured using the THz source that produces the 580 GHz radiation. The beam was directed to the centre of the fabricated optical elements. Zone plates with integrated band-pass filters have shown the double performance in focusing and spectral selection. The dependence of ablation rate and surface roughness on the laser process parameters was thoroughly investigated on the silicon. The depth of the ablated grooves linearly depends on the number of laser scans number with a particular slope for each scanning speed. The process regime with the 125 mm/s scanning speed provided the most precise control over the ablation depth. The topography measurements of the laser fabricated multilevel phase zone plates (Fresnel lenses) with the 10 mm focal length showed good agreement with the calculated topography. The intensity distribution of the focus spots using the laser fabricated 2, 4 and 8 level binary Fresnel lenses showed better focusing performance when more depth levels were applied in the lens production.

The evidence of multi-photon absorption enhancement by the dual-wavelength double-pulse laser irradiation in transparent sapphire was demonstrated experimentally and explained theoretically for the first time. Two collinearly combined laser beams with the wavelengths of 1064 nm and 355 nm, inter-pulse delay of 0.1 ns, and pulse duration of 10 ps were used to induce intra-volume modifications in sapphire. The theoretical prediction of using a particular orientation angle of 15 degrees of the half-wave plate for the most efficient absorption of laser irradiation is in good agreement with the experimental data. The new innovative effect of multi-photon absorption enhancement by dual-wavelength double-pulse irradiation allowed utilisation of the laser energy up to four times more efficiently for initiation of internal modifications in sapphire. The new absorption enhancement effect has been used for efficient intra-volume dicing and singulation of transparent sapphire wafers. The dicing speed of 150 mm/s was achieved for the 430 μm thick sapphire wafer by using the laser power of 6.8 W at the repetition rate of 100 kHz. This method opens new opportunities for the manufacturers of the GaN-based light-emitting diodes by fast and precise separation of sapphire substrates.