Publication database

Zone plates with integrated band-pass filters and binary Fresnel lenses designed for the THz spectral range were fabricated by direct laser ablation in metal films and the silicon substrate. Results on the process performance and quality of the products are reviewed. The focusing performance was measured using the THz source that produces the 580 GHz radiation. The beam was directed to the centre of the fabricated optical elements. Zone plates with integrated band-pass filters have shown the double performance in focusing and spectral selection. The dependence of ablation rate and surface roughness on the laser process parameters was thoroughly investigated on the silicon. The depth of the ablated grooves linearly depends on the number of laser scans number with a particular slope for each scanning speed. The process regime with the 125 mm/s scanning speed provided the most precise control over the ablation depth. The topography measurements of the laser fabricated multilevel phase zone plates (Fresnel lenses) with the 10 mm focal length showed good agreement with the calculated topography. The intensity distribution of the focus spots using the laser fabricated 2, 4 and 8 level binary Fresnel lenses showed better focusing performance when more depth levels were applied in the lens production.

The evidence of multi-photon absorption enhancement by the dual-wavelength double-pulse laser irradiation in transparent sapphire was demonstrated experimentally and explained theoretically for the first time. Two collinearly combined laser beams with the wavelengths of 1064 nm and 355 nm, inter-pulse delay of 0.1 ns, and pulse duration of 10 ps were used to induce intra-volume modifications in sapphire. The theoretical prediction of using a particular orientation angle of 15 degrees of the half-wave plate for the most efficient absorption of laser irradiation is in good agreement with the experimental data. The new innovative effect of multi-photon absorption enhancement by dual-wavelength double-pulse irradiation allowed utilisation of the laser energy up to four times more efficiently for initiation of internal modifications in sapphire. The new absorption enhancement effect has been used for efficient intra-volume dicing and singulation of transparent sapphire wafers. The dicing speed of 150 mm/s was achieved for the 430 μm thick sapphire wafer by using the laser power of 6.8 W at the repetition rate of 100 kHz. This method opens new opportunities for the manufacturers of the GaN-based light-emitting diodes by fast and precise separation of sapphire substrates.

The laser oxidation of thin metallic films followed by its selective chemical etching is a promising method for the formation of binary metal structures on the glass substrates. It is important to confirm that even a single ultrashort laser pulse irradiation is able to create the protective oxide layer that makes possible to imprint the thermochemical image.

Results of the thermo-chemical treatment of thin chromium films irradiated by picosecond laser pulse utilizing two and four beam interference combined with the chemical etching are presented. The spatial resolution of this method can be high enough due to thermo-chemical sharpening and can be close to the diffraction limit. Micro-Raman spectroscopy was applied for characterization of the chemical composition of the protective oxide layers formed under atmospheric conditions on the surface of thin chromium films.

As part of a technical challenge under the Advanced Composites Program, methods for improving pre-bond process control for aerospace composite surface treatments and inspections, in conjunction with Federal Aviation Administration guidelines, are under investigation. The overall goal is to demonstrate high fidelity, rapid and reproducible surface treatment and surface characterization methods to reduce uncertainty associated with the bonding process. The desired outcomes are reliable bonded airframe structure, and reduced timeline to certification. In this work, laser ablation was conducted using a q-switched Nd:YVO₄ laser capable of nominal pulse durations of 8 picoseconds (ps). Aerospace structural carbon fiber reinforced composites with an epoxy resin matrix were laser treated, characterized, processed into bonded assemblies and mechanically tested. The characterization of ablated surfaces were conducted using scanning electron microscopy (SEM), water contact angle (WCA) goniometry, micro laser induced breakdown spectroscopy (uLIBS), and electron spin resonance (ESR). The bond performance was assessed using a double cantilever beam (DCB) test with an epoxy adhesive. The surface characteristics and bond performance obtained from picosecond ablated carbon fiber reinforced plastics (CFRPs) are presented herein.

In this work a novel colour-difference measurement method for the quality evaluation of copper deposited on a polymer is proposed. Laser-induced selective activation (LISA) was performed onto the surface of the polycarbonate/acrylonitrile butadiene styrene (PC/ABS) polymer by using nanosecond laser irradiation. The laser activated PC/ABS polymer was copper plated by using the electroless copper plating (ECP) procedure. The sheet resistance measured by using a four-point probe technique was found to decrease by the power law with the colour-difference of the sample images after LISA and ECP procedures. The percolation theory of the electrical conductivity of the insulator conductor mixture has been adopted in order to explain the experimental results. The new proposed method was used to determine an optimal set of the laser processing parameters for best plating conditions.

Immune responses have to be tightly controlled to guarantee maintenance of immunological tolerance and efficient clearance of pathogens and tumorigenic cells without induction of unspecific side effects. CD4⁺ CD25⁺ regulatory T cells (Tregs) play an important role in these processes due to their immunosuppressive function. Genetic modification of Tregs would be helpful to understand which molecules and pathways are involved in their function, but currently available methods are limited by time, costs or efficacy. Here, we made use of biofunctionalized gold nanoparticles as non-viral carriers to transport genetic information into murine Tregs. Confocal microscopy and transmission electron microscopy revealed an efficient uptake of the bioconjugates by Tregs. Most importantly, coupling eGFP-siRNA to those particles resulted in a dose and time dependent reduction of up to 50% of eGFP expression in Tregs isolated from Foxp3eGFP reporter mice. Thus, gold particles represent a suitable carrier for efficient import of nucleic acids into murine CD4⁺ CD25⁺ Tregs, superior to electroporation.

Laser writing for selective plating of electro-conductive lines for electronics has several significant advantages, compared to conventional printed circuit board technology. Firstly, this method is faster and cheaper at the prototyping stage. Secondly, material consumption is reduced, because it works selectively. However, the biggest merit of this method is potentiality to produce moulded interconnect device, enabling to create electronics on complex 3D surfaces, thus saving space, materials and cost of production. There are two basic techniques of laser writing for selective plating on plastics: the laser-induced selective activation (LISA) and laser direct structuring (LDS). In the LISA method, pure plastics without any dopant (filler) can be used. In the LDS method, special fillers are mixed in the polymer matrix. These fillers are activated during laser writing process, and, in the next processing step, the laser modified area can be selectively plated with metals.

In this work, both methods of the laser writing for the selective plating of polymers were investigated and compared. For LDS approach, new material: polypropylene with carbon-based additives was tested using picosecond and nanosecond laser pulses. Different laser processing parameters (laser pulse energy, scanning speed, the number of scans, pulse durations, wavelength and overlapping of scanned lines) were applied in order to find out the optimal regime of activation. Areal selectivity tests showed a high plating resolution. The narrowest width of a copper-plated line was less than 23 μm. Finally, our material was applied to the prototype of the electronic circuit board on a 2D surface.

Cu-chalcopyrite based solar cells such as Cu(In,Ga)Se₂ (CIGS) have been established as the most efficient thin-film technology in converting sunlight into electricity. Laser scribed monolithic interconnects are one of the key technologies which will play a significant role in future develop-ments of CIGS technology. Laser scribing is needed to maintain module efficiency by dividing large scale device to smaller cells interconnected in series. CIGS layer is a thermally sensitive material, and laser modification can induce local structural changes of the active layer and significantly modi-fy the electrical properties. Therefore, the laser modified region can act as series interconnect be-tween the adjacent cells. In this study, we investigated the laser modification of the CIGS active layer with picosecond laser. The EDS analysis revealed the increase of Cu/(In+Ga) ratio in laser treated areas while Raman measurements indicated changes in main CIGS peak and formation of the Cu-rich CuGaSe₂ phase. Therefore, this resulted in significant electrical conductivity increase in laser-treated areas. Electrical testing of the laser performed P2 micro-welds showed scribe conduc-tivities up to 9.3 Ω·cm which are acceptable for the cell serial interconnection.

This work highlights a strategy for the one-step synthesis of FeAu nanoparticles by the pulsed laser ablation of alloy targets in the presence of different solvents. This method allows particle generation without the use of additional chemicals; hence, solvent-metal interactions could be studied without cross effects from organic surface ligands. A detailed analysis of generated particles via transmission electron microscopy in combination with EDX elemental mapping could conclusively verify that the nature of the used solvent governs the internal phase structure of the formed nanoparticles. In the presence of acetone or methyl methacrylate, a gold shell covering a non-oxidized iron core was formed, whereas in aqueous media, an Au core with an Fe₃O₄ shell was generated. This core-shell morphology was the predominant species found in >90% of the examined nanoparticles. These findings indicate that fundamental chemical interactions between the nanoparticle surface and the solvent significantly contribute to phase segregation and elemental distribution in FeAu nanoparticles. A consecutive analysis of resulting Fe@Au core-shell nanoparticles revealed outstanding oxidation resistance and fair magnetic and optical properties. In particular, the combination of these features with high stability magnetism and plasmonics may create new opportunities for this hybrid material in imaging applications.

Cu-chalcopyrite based solar cells, such as Cu(In,Ga)Se₂ (generally called CIGS) have been established as the most efficient thin-film technology in converting sunlight into electricity. High efficiency, flexibility and small weight make this technology attractive for future developments. Large scale production of these devices requires innovative technological solutions including the laser scribed monolithic interconnects. Laser scribing is needed to maintain module efficiency by dividing large scale device to smaller cells interconnected in series. Serious challenges in laser scribing technology have to be solved, including the laser induced thermal modification of the CIGS absorber layer. CIGS layer is thermally sensitive material, and laser modification can induce local structural changes and phase transitions to the metallic state. That is undesirable for the P3 scribing since superior isolating properties are needed. However, this effect can be used for the P2 process – interconnection of the adjacent cells. In this study, we investigated the picosecond laser modification of the CIGS active layer to form the series interconnect. The P2 laser process was optimized relying on the scribe electrical resistivity measurements with the best value of 3.5 Ω·cm. The EDS analysis revealed the increase of Cu/(Ga + In) ratio in laser treated areas while Raman measurements indicated changes in main CIGS peak and the formation of the Cu-rich CuGaSe₂ phase. Therefore, this resulted in a significant electrical conductivity increase in laser-treated areas which is acceptable for the cell serial interconnection.