Publication database

Laser interference ablation in silicon using femto-, pico-, and nanosecond pulses was investigated. The experimental and computational results provide information about nanoscale thermal diffusion during the ultra-short laser–matter interaction. The temperature modulation depth was introduced as a parameter for quality assessment of laser interference ablation. Based on the experiments and calculations, a new semi-empirical formula which combines the interference period with the laser pulse duration, the thermal modulation depth and the thermal diffusivity of the material was derived. This equation is in excellent agreement with the experimental and modelling results of laser interference ablation. This new formula can be used for selecting the appropriate pulse duration for periodical structuring with the required resolution and quality.

The ultrashort laser processing of the cutting tools and cutting inserts from tungsten carbide, ceramic and metal composites (CERMET), and polycrystalline diamond materials was demonstrated, and the ablation rates of mentioned ultra-hard materials were evaluated for a laser wavelength of 1064 and 532 nm. The optimal processing throughput was estimated. Laser manufacturing was performed with the five-axis computer numerical control (CNC) machine and scanner for beam translation with the high speed and the ultrashort ∼12 ps pulse duration high repetition rate laser source. The systematic approach was implemented in an experimental variation of process parameters that play a significant role in processing quality. By varying the laser fluence, pulse overlap, and layers’ count, different material removing rates can be achieved from 300 nm/layer to ∼18 μm/layer. The submicrometer removing rate involves a high precision control of the structure depth. It was demonstrated that only by a minor change of the processing parameters, the surface roughness of the material could be minimized down to Ra < 300 nm. Rough and smooth processing can be combined to optimize the structure processing throughput.

Highly active, structurally disordered CoFe₂O₄/CoO electrocatalysts are synthesized by pulsed laser fragmentation in liquid (PLFL) of a commercial CoFe₂O₄ powder dispersed in water. A partial transformation of the CoFe₂O₄ educt to CoO is observed and proposed to be a thermal decomposition process induced by the picosecond pulsed laser irradiation. The overpotential in the OER in aqueous alkaline media at 10 mA cm⁻² is reduced by 23% compared to the educt down to 0.32 V with a Tafel slope of 71 mV dec⁻¹. Importantly, the catalytic activity is systematically adjustable by the number of PLFL treatment cycles. The occurrence of thermal melting and decomposition during one PLFL cycle is verified by modelling the laser beam energy distribution within the irradiated colloid volume and comparing the by single particles absorbed part to threshold energies. Thermal decomposition leads to a massive reduction in particle size and crystal transformations towards crystalline CoO and amorphous CoFe₂O₄. Subsequently, thermal melting forms multi-phase spherical and network-like particles. Additionally, Fe-based layered double hydroxides at higher process cycle repetitions emerge as a byproduct. The results show that PLFL is a promising method that allows modification of the structural order in oxides and thus access to catalytically interesting materials.

In this paper, we investigate the laser processing of the CIGS thin-film solar cells in the case of the high-speed regime. The modern ultra-short pulsed laser was used exhibiting the pulse repetition rate of 1 MHz. Two main P3 scribing approaches were investigated – ablation of the full layer stack to expose the molybdenum back-contact, and removal of the front-contact only. The scribe quality was evaluated by SEM together with EDS spectrometer followed by electrical measurements. We also modelled the electrical behavior of a device at the mini-module scale taking into account the laser-induced damage. We demonstrated, that high-speed process at high laser pulse repetition rate induced thermal damage to the cell. However, the top-contact layer lift-off processing enabled us to reach 1.7 m/s scribing speed with a minimal device degradation. Also, we demonstrated the P3 processing in the ultra-high speed regime, where the scribing speed of 50 m/s was obtained. Finally, selected laser processes were tested in the case of mini-module scribing. Overall, we conclude, that the top-contact layer lift-off processing is the only reliable solution for high-speed P3 laser scribing, which can be implemented in the future terawatt-scale photovoltaic production facilities.

Medical tools and other devices made of stainless steel (SS) require laser markings for unique device identification (UDI). These markings need to be corrosion resistant in order to withstand numerous autoclave cycles. EKSPLA with FTMC has developed a picosecond laser marking system – for reliable UDI marks on surgical and spring grade of stainless steel for corrosion resistive applications.

Recently the quantum dots (QDs) synthesis from single source precursors (SSPs) showed a potential interest for patterning formation of nano-composites. In this approach the SSPs have to be mixed with a matrix that afterwards is treated selectively to obtain the desired nanocomposite. The study of the generation of the QDs from the SSPs is, therefore, crucial for the definition of its behaviour within the polymeric matrix. The formation of the CdS QDs via thermolysis of the cadmium diethyldithiocarbamate (CdDDTC) was performed and studied in the presence of a non coordinating solvent such as octadecene (ODE) in presence of myristic acid (MA) as ligand. The precursor is then studied in combination with the poly(methyl methacrylate) (PMMA) polymer for the generation of the CdS QDs under the laser irradiation within a film. The effect of the laser has been studied both on neat PMMA and on the polymer/precursor blend film with the aid of the fluorescence microscope. The results are used to identify the optimal laser parameters to obtain the decomposition of the precursor and to evaluate the effect of the laser irradiation on the polymer.

Pulsed laser melting in liquid (PLML) has emerged as a facile approach to synthesize submicron spheres (SMSs) for various applications. Typically lasers with long pulse durations in the nanosecond regime are used. However, recent findings show that during melting the energy absorbed by the particle will be dissipated promptly after laser-matter interaction following the temperature decrease within tens of nanoseconds and hence limiting the efficiency of longer pulse widths. Here, the feasibility to utilize a picosecond laser to synthesize Ge SMSs (200~1000 nm in diameter) is demonstrated by irradiating polydisperse Ge powders in water and isopropanol. Through analyzing the educt size dependent SMSs formation mechanism, we find that Ge powders (200~1000 nm) are directly transformed into SMSs during PLML via reshaping, while comparatively larger powders (1000~2000 nm) are split into daughter SMSs via liquid droplet bisection. Furthermore, the contribution of powders larger than 2000 nm and smaller than 200 nm to form SMSs is discussed. This work shows that compared to nanosecond lasers, picosecond lasers are also suitable to produce SMSs if the pulse duration is longer than the material electron-phonon coupling period to allow thermal relaxation.

Zone plates with integrated band-pass filters and binary Fresnel lenses designed for the THz spectral range were fabricated by direct laser ablation in metal films and the silicon substrate. Results on the process performance and quality of the products are reviewed. The focusing performance was measured using the THz source that produces the 580 GHz radiation. The beam was directed to the centre of the fabricated optical elements. Zone plates with integrated band-pass filters have shown the double performance in focusing and spectral selection. The dependence of ablation rate and surface roughness on the laser process parameters was thoroughly investigated on the silicon. The depth of the ablated grooves linearly depends on the number of laser scans number with a particular slope for each scanning speed. The process regime with the 125 mm/s scanning speed provided the most precise control over the ablation depth. The topography measurements of the laser fabricated multilevel phase zone plates (Fresnel lenses) with the 10 mm focal length showed good agreement with the calculated topography. The intensity distribution of the focus spots using the laser fabricated 2, 4 and 8 level binary Fresnel lenses showed better focusing performance when more depth levels were applied in the lens production.

The evidence of multi-photon absorption enhancement by the dual-wavelength double-pulse laser irradiation in transparent sapphire was demonstrated experimentally and explained theoretically for the first time. Two collinearly combined laser beams with the wavelengths of 1064 nm and 355 nm, inter-pulse delay of 0.1 ns, and pulse duration of 10 ps were used to induce intra-volume modifications in sapphire. The theoretical prediction of using a particular orientation angle of 15 degrees of the half-wave plate for the most efficient absorption of laser irradiation is in good agreement with the experimental data. The new innovative effect of multi-photon absorption enhancement by dual-wavelength double-pulse irradiation allowed utilisation of the laser energy up to four times more efficiently for initiation of internal modifications in sapphire. The new absorption enhancement effect has been used for efficient intra-volume dicing and singulation of transparent sapphire wafers. The dicing speed of 150 mm/s was achieved for the 430 μm thick sapphire wafer by using the laser power of 6.8 W at the repetition rate of 100 kHz. This method opens new opportunities for the manufacturers of the GaN-based light-emitting diodes by fast and precise separation of sapphire substrates.

The laser oxidation of thin metallic films followed by its selective chemical etching is a promising method for the formation of binary metal structures on the glass substrates. It is important to confirm that even a single ultrashort laser pulse irradiation is able to create the protective oxide layer that makes possible to imprint the thermochemical image.

Results of the thermo-chemical treatment of thin chromium films irradiated by picosecond laser pulse utilizing two and four beam interference combined with the chemical etching are presented. The spatial resolution of this method can be high enough due to thermo-chemical sharpening and can be close to the diffraction limit. Micro-Raman spectroscopy was applied for characterization of the chemical composition of the protective oxide layers formed under atmospheric conditions on the surface of thin chromium films.