Publication database

Cu-chalcopyrite based solar cells, such as Cu(In,Ga)Se₂ (generally called CIGS) have been established as the most efficient thin-film technology in converting sunlight into electricity. High efficiency, flexibility and small weight make this technology attractive for future developments. Large scale production of these devices requires innovative technological solutions including the laser scribed monolithic interconnects. Laser scribing is needed to maintain module efficiency by dividing large scale device to smaller cells interconnected in series. Serious challenges in laser scribing technology have to be solved, including the laser induced thermal modification of the CIGS absorber layer. CIGS layer is thermally sensitive material, and laser modification can induce local structural changes and phase transitions to the metallic state. That is undesirable for the P3 scribing since superior isolating properties are needed. However, this effect can be used for the P2 process – interconnection of the adjacent cells. In this study, we investigated the picosecond laser modification of the CIGS active layer to form the series interconnect. The P2 laser process was optimized relying on the scribe electrical resistivity measurements with the best value of 3.5 Ω·cm. The EDS analysis revealed the increase of Cu/(Ga + In) ratio in laser treated areas while Raman measurements indicated changes in main CIGS peak and the formation of the Cu-rich CuGaSe₂ phase. Therefore, this resulted in a significant electrical conductivity increase in laser-treated areas which is acceptable for the cell serial interconnection.

Among the parameters that characterize a solar cell and define its power-conversion efficiency, the fill factor is the least well understood, making targeted improvements difficult. Here we quantify the competition between charge extraction and recombination by using a single parameter θ, and we demonstrate that this parameter is directly related to the fill factor of many different bulk-heterojunction solar cells. Our finding is supported by experimental measurements on 15 different donor:acceptor combinations, as well as by drift-diffusion simulations of organic solar cells in which charge-carrier mobilities, recombination rate, light intensity, energy levels and active-layer thickness are all varied over wide ranges to reproduce typical experimental conditions. The results unify the fill factors of several very different donor:acceptor combinations and give insight into why fill factors change so much with thickness, light intensity and materials properties. To achieve fill factors larger than 0.8 requires further improvements in charge transport while reducing recombination.

New results on development of the Direct Laser Interference Patterning (DLIP) technique using the interference of several beams to directly ablate the material are presented. The method is capable of producing sub-wavelength features not limited by a beam spot size and is an effective method of forming two-dimensional periodic structures on relatively large area with just a single laser shot. Surface texturing speed of DLIP method and the direct laser writing was compared. Fabrication time reduction up to a few orders of magnitude using DLIP was evaluated. The sub-period scanning technique was applied for formation of the complex periodic structures. A new method of laser scanning for fabrication of periodic structures on large areas without any visible stitching signs between laser irradiation spots was tested.

Here we developed a real-time photoacoustic tomography (PAT) imaging acquisition device based on the linear array transducer utilized on ultrasonic devices. Also, we produced a phantom including diverse contrast media and acquired PAT imaging as the light source wavelength was changing to see if the contrast media reacted. Indocyanine green showed the highest reaction around the 800-nm band, methylene blue demonstrated the same in the 750-nm band, and gold nanoparticle showed the same in the 700-nm band. However, in the case of superparamagnetic iron oxide, we observed not reaction within the wavelength bands used herein to obtain imaging. Moreover, we applied selective filtering to the acquired PAT imaging to remove noise from around and reinforce the object’s area. Consequentially, we could see the object area in the imaging was effectively detected and the image noise was removed.

We have observed extreme ultraviolet (EUV) spectra from terbium (Tb) ions in optically thin and thick plasmas for a comparative study. The experimental spectra are recorded in optically thin, magnetically confined torus plasmas and dense laser-produced plasmas (LPPs). The main feature of the spectra is quasicontinuum emission with a peak around 6.5-6.6 nm, the bandwidth of which is narrower in the torus plasmas than in the LPPs. A comparison between the two types of spectra also suggests strong opacity effects in the LPPs. A comparison with the calculated line strength distributions gives a qualitative interpretation of the observed spectra.

The picosecond laser-induced ripple formation on the stainless steel surface upon irradiation with linearly-polarized single-pulse and dual-wavelength cross-polarized double-pulse trains in air was studied experimentally. The characteristic switching of the ripple period and orientation were observed depending on the inter-pulse delay in the dual-wavelength cross-polarized double-pulse train irradiation experiments.

Nanostructured composites of inorganic and organic materials are attracting extensive interest for electronic and optoelectronic device applications. Here we report a novel method for the fabrication and patterning of metal selenide nanoparticles in organic semiconductor films that is compatible with solution processable large area device manufacturing. Our approach is based upon the controlled in situ decomposition of a cadmium selenide precursor complex in a film of the electron transporting material 1,3,5-tris(N-phenyl-benzimidazol-2-yl)-benzene (TPBI) by thermal and optical methods. In particular, we show that the photoluminescence quantum yield (PLQY) of the thermally converted CdSe quantum dots (QDs) in the TPBI film is up to 15%. We also show that laser illumination can form the QDs from the precursor. This is an important result as it enables direct laser patterning (DLP) of the QDs. DLP was performed on these nanocomposites using a picosecond laser. Confocal microscopy shows the formation of emissive QDs after laser irradiation. The optical and structural properties of the QDs were also analysed by means of UV-Vis, PL spectroscopy and transmission electron microscopy (TEM). The results show that the QDs are well distributed across the film and their emission can be tuned over a wide range by varying the temperature or irradiated laser power on the blend films. Our findings provide a route to the low cost patterning of hybrid electroluminescent devices.

In this paper, experiments are described in which cylindrical vacuum insulator samples and samples inclined at 45° relative to the cathode were stressed by microsecond timescale high-voltage pulses and illuminated by focused UV laser beam pulses. In these experiments, we were able to distinguish between flashover initiated by the laser producing only photo-electrons and when plasma is formed. It was shown that flashover is predominantly initiated near the cathode triple junction. Even dense plasma formed near the anode triple junction does not necessarily lead to vacuum surface flashover. The experimental results directly confirm our conjecture that insulator surface breakdown can be avoided by preventing its initiation [J. G. Leopold et al., Phys. Rev. ST Accel. Beams 10, 060401 (2007)] and complement our previous experimental results [J. Z. Gleizer et al., IEEE Trans. Dielectr. Electr. Insul. 21, 2394 (2014) and J. Z. Gleizer et al., J. Appl. Phys. 117, 073301 (2015)].

The picosecond laser irradiation of diamond-like carbon (DLC) film on the silicon wasinvestigated. The DLC films were irradiated by Nd:YVO₄ laser with the infrared (1064 nm, fluency 1.02 J/cm²) and ultraviolet (355 nm, fluency 0.79 J/cm²) wavelengths with 1, 10, and 100 pulse numbers per spot. The energy dispersive X-ray spectroscopy and microRaman spectroscopy measurements indicated that the full ablation area of the DLC was narrower than laser beam radius of the 1064 nm wavelength with 10 and 100 pulses. The increase of the oxygen concentration was obtained near the ablation areas after irradiation with the first harmonic. The microRaman and SEM measurements demonstrated that the DLC film was fully ablated in the laser spot when the third harmonic was used. The formation of silicon carbide (SiC) in the center of the irradiated spot was found after 100 pulses.

Hybrid particles are of great significance in terms of their adjustable optical, electronic, magnetic, thermal and mechanical properties. As a novel technique, laser ablation in liquids (LAL) is famous for its precursor-free, “clean” synthesis of hybrid particles with various materials. Till now, almost all the LAL-generated particles originate from the nucleation-growth mechanism. Seed-growth of particles similar to chemical methods seems difficult to be achieved by LAL. Here, we not only present novel patch-joint football-like AgGe microspheres with a diameter in the range of 1 ~ 7 μm achievable by laser ablation in distilled water but also find direct evidences of their layered seed growth mechanism. Many critical factors contribute to the formation of AgGe microspheres: fast laser-generated plasma process provide an excellent condition for generating large amount of Ge and Ag ions/atoms, their initial nucleation and galvanic replacement reaction, while cavitation bubble confinement plays an important role for the increase of AgGe nuclei and subsequent layered growth in water after bubble collapse. Driven by work function difference, Ge acts as nucleation agent for silver during alloy formation. This new seed-growth mechanism for LAL technique opens new opportunities to develop a large variety of novel hybrid materials with controllable properties.