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We have used a precision-calibrated photodiode as the fundamental metrology reference in order to determine the relative throughput of the PanSTARRS telescope and the Gigapixel imager, from 400 nm to 1050 nm. Our technique uses a tunable laser as a source of illumination on a transmissive flat-field screen. We determine the full-aperture system throughput as a function of wavelength, including (in a single integral measurement) the mirror reflectivity, the transmission functions of the filters and the corrector optics, and the detector quantum efficiency, by comparing the light seen by each pixel in the CCD array to that measured by a precision-calibrated silicon photodiode. This method allows us to determine the relative throughput of the entire system as a function of wavelength, for each pixel in the instrument, without observations of celestial standards. We present promising initial results from this characterization of the PanSTARRS system, and we use synthetic photometry to assess the photometric perturbations due to throughput variation across the field of view.

Using metallorganic vapor-phase epitaxy, thin films of gallium nitride activated by Eu³⁺(GaN : Eu³⁺) have been deposited on sapphire substrates at atmospheric pressure. Luminescence from Eu³⁺ ions in GaN has been investigated using photoluminescence (PL) and PL excitation spectroscopy. Experimental results show that Eu³⁺ ions are excited via energy transfer from the host. Analyses of the observed emission and excitation spectra indicate occupancy of multiple sites in the nitride lattice. Using a pulsed laser source, variation of emission intensity with increasing excitation intensity has also been examined. The possibility of emission saturation at high excitation intensity is discussed from the perspective of application in light-emitting diode sources.