Other materials
Compared to traditional methods, femtosecond lasers with their very short pulse durations offer superior precision. Complex 3D structures as well as non-conventional shapes can be obtained.
Femtosecond processing of GaAs in ambient air and water environment
Processing semiconductor materials such as Gallium Arsenide (GaAs) using ultrashort laser pulses presents unique challenges due to heat accumulation and the need for precise, high-quality modifications. Femtosecond lasers are particularly well-suited for this task, offering minimal thermal impact and high precision.
In a comprehensive study, the ablation of GaAs was investigated in both ambient air and water environments. The study utilized a Femtolux 30, operating at a wavelength of 1030 nm, pulse durations of 900 fs and at repetition rates were tested of 10, 50, and 200 kHz. By ablating trenches on the sample surface in different environments it was observed that usage of water results in increase in trench depth from 58 um to 105 um. Also, due to water environment the ablation debris redeposition width was reduced from 34 um to 7.6 um, essentially leading to higher quality processing. Overall, the study showcased that water environment is beneficial in processing GaAs substrates with a femtosecond laser source.
GaAs laser ablation parameters for trench milling in water
Regime No. | Average laser power | Pulse repetition rate | Scanning speed | Number of scans | Fluence | Hatch | Number of lines in scan | Trench depth |
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1 | 0.4 W | 10 kHz | 50 mm/s | 14 | 13.1 J/cm2 | 10 µm | 11 | 105 µm |
2 | 2 W | 50 kHz | 250 mm/s | 14 | 13.1 J/cm2 | 10 µm | 11 | 99 µm |
3 | 8 W | 200 kHz | 1000 mm/s | 14 | 13.1 J/cm2 | 10 µm | 11 | 75 µm |
Regime No. | Average laser power | Pulse repetition rate | Scanning speed | Number of scans | Fluence | Hatch | Number of lines in scan | Trench depth |
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