NanoFLux MM series
Multimode (MM) High Energy Q-switched Nd:YAG Lasers
High energy NanoFLux MM series lasers are designed to produce high energy nanosecond pulses at 1064 nm. High pulse energy, excellent pulse-to-pulse energy stability, superior beam quality makes these systems well suited for applications like OPO or Ti: Sapphire pumping, material processing and plasma diagnostics and others.
Features
- High energy nanosecond lasers
- Up to 10 J pulse energies
- 5 ns pulse duration
- Up to 20 ns pulse duration options available
- 10 or 20 Hz pulse repetition rate
- Better than 0.5% RMS pulse energy stability
- Up to 90 M2 version available
- High efficiency pump chambers and advanced beam shaping for maximum pulse energy extraction
- Relay imaging between amplifier stages for smooth beam profile at the laser output
- Thermally induced birefringence compensated
- Optional temperature stabilized second, third, fourth and fifth harmonic generators
- Low jitter internal/external synchronization
- Robust and stable laser head
- Control through keypad, USB and LAN interfaces with supplied Windows control software (RS232 as optional)
Applications
- OPO, Ti: Sapphire, dye laser pumping
- Material processing
- Plasma generation and diagnostics
- Nonlinear spectroscopy
- Remote sensing
Description
High energy NanoFLux MM series lasers are designed to produce high energy nanosecond pulses at 1064 nm. High pulse energy, excellent pulse-to-pulse energy stability, superior beam quality makes these systems well suited for applications like OPO or Ti: Sapphire pumping, material processing and plasma diagnostics and others.
NanoFLux MM series Q-switched oscillators are designed as extremely reliable and stable nanosecond seeding sources producing hundreds mJ pulses from a compact sized body. Simple access to critical compartments of the oscillator allows for easy maintenance. The higher M2 version uses a pro-longed oscillator design that allows a much higher number of modes to oscillate which results in M2 value up to 90. In this case the beam profile becomes very homogenous and flat which can be useful in a number of applications.
NanoFLux series linear amplifiers are cost effective solution for high energy nanosecond systems. Advanced beam shaping ensures smooth, without hot spots beam spatial profile at the laser output. Low light depolarization level allows high efficiency generation of up to 4th harmonic with optional build-in harmonic generators. The simple and field proven design ensures easy maintenance and reliable long-term operation of the NanoFLux MM series laser.
Angle-tuned non-linear crystals harmonic generators mounted in temperature stabilized heaters are used for second, third and fourth harmonic generation. Harmonic separation system is designed to ensure high spectral purity of radiation and direct it to the output ports. Harmonic generators can be integrated into laser head or placed outside laser head into auxiliary harmonic generator module. Output wavelength switching is done manually. Motorized wavelength switching is available by request.
Triggering of the laser is possible from built-in internal or external pulse generator. Pulses with TTL levels are required for external triggering. Laser pulses have less than 0.5 ns RMS jitter with respect to Q-switch triggering pulse in both cases.
System control is available through control pad, USB and LAN interfaces (RS232 as optional). The system can be controlled from personal computer with supplied software for Windows operating system.
Specifications
Model | NanoFLux N3k10 | NanoFLux N5k10 | NanoFLux N7k10 | NanoFLux N10k10 |
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Main specifications 1) | ||||
Output energy | ||||
at 1064 nm | 3000 mJ | 5000 mJ | 7000 mJ | 10000 mJ |
at 532 nm 2) 3) | 1500 mJ | 2500 mJ | 3500 mJ | 5000 mJ |
at 355 nm 2) | 1000 mJ | 1300 mJ | 1700 mJ | 2000 mJ |
at 266 nm 2) | 270 mJ | 400 mJ | 500 mJ | 700 mJ |
Pulse repetition rate | 10 Hz | 10 Hz | 10 Hz | 10 Hz |
Pulse duration 4) | 5 ± 1 ns | 5 ± 1 ns | 5 ± 1 ns | 5 ± 1 ns |
Pulse energy stability 5) | ||||
at 1064 nm | ≤ 0.5 % | ≤ 0.5 % | ≤ 0.5 % | ≤ 0.5 % |
at 532 nm | ≤ 1 % | ≤ 1 % | ≤ 1 % | ≤ 1 % |
at 355 nm | ≤ 2 % | ≤ 2 % | ≤ 2 % | ≤ 2 % |
at 266 nm | ≤ 3 % | ≤ 3 % | ≤ 3 % | ≤ 3 % |
Long-term power drift 6) | ± 2 % | ± 2 % | ± 2 % | ± 2 % |
Beam spatial profile 7) | Super-Gaussian | Super-Gaussian | Super-Gaussian | Super-Gaussian |
M2 8) | ~5 | ~5 | ~5 | ~5 |
Beam diameter 9) | ~ 18 mm | ~ 18 mm | ~ 25 mm | ~ 25 mm |
Beam pointing stability 10) | ≤ 50 µrad | ≤ 50 µrad | ≤ 50 µrad | ≤ 50 µrad |
Beam divergence | ≤ 0.5 mrad | ≤ 0.5 mrad | ≤ 0.5 mrad | ≤ 0.5 mrad |
Optical pulse jitter 11) | ≤ 0.5 ns | ≤ 0.5 ns | ≤ 0.5 ns | ≤ 0.5 ns |
Linewidth | ≤ 1 cm‑1 | ≤ 1 cm‑1 | ≤ 1 cm‑1 | ≤ 1 cm‑1 |
Polarization | linear | linear | linear | linear |
Physical characteristics 12) | ||||
Laser head size (W×L×H mm) | 460 × 1250 × 260 | 500 × 1300 × 300 | 600 × 1800 × 300 | 700 × 2000 × 300 |
Power supply size (W×L×H mm) | 550 × 600 × 1250 | 550 × 600 × 1250 | 550 × 600 × 1250 | 550 × 600 × 1640 |
Umbilical length 13) | 5 m | 5 m | 5 m | 5 m |
Operating requirements 14) | ||||
Power requirements 15) | 208, 380 or 400 V AC, three phase, 50/60 Hz | 208, 380 or 400 V AC, three phase, 50/60 Hz | 208, 380 or 400 V AC, three phase, 50/60 Hz | 208, 380 or 400 V AC, three phase, 50/60 Hz |
Power consumption 16) | ≤ 5 kVA | ≤ 6 kVA | ≤ 7 kVA | ≤ 8 kVA |
Water supply 16) | ≤ 5 l/min, 2 Bar, max 15 °C | ≤ 5 l/min, 2 Bar, max 15 °C | ≤ 12 l/min, 2 Bar, max 15 °C | ≤ 12 l/min, 2 Bar, max 15 °C |
Operating ambient temperature | 22 ± 2 °C | 22 ± 2 °C | 22 ± 2 °C | 22 ± 2 °C |
Storage ambient temperature | 15 – 35 °C | 15 – 35 °C | 15 – 35 °C | 15 – 35 °C |
Relative humidity (non-condensing) | ≤ 80 % | ≤ 80 % | ≤ 80 % | ≤ 80 % |
Cleanness of the room | ISO Class 7 | ISO Class 7 | ISO Class 7 | ISO Class 7 |
Model | NanoFLux N3k10 | NanoFLux N5k10 | NanoFLux N7k10 | NanoFLux N10k10 |
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- Due to continuous improvement, all specifications are subject to change without notice. The parameters marked ‘typical’ are indications of typical performance and will vary with each unit we manufacture. Presented parameters can be customized to meet customer‘s requirements. All parameters measured at 1064 nm if not stated otherwise.
- Harmonic outputs are optional. Specifications valid with respective harmonic module purchased. Outputs are not simultaneous.
- Second harmonic is available with LBO crystal then the conversion efficiency is increased to 70%. If TH/FH options are orders second harmonic efficiency is reduced to ~50%.
- Standard pulse duration is 5 ns. Other pulse durations can be ordered within range of 10 – 20 s. Output energy might differ depending on duration.
- Under stable environmental conditions, normalized to average pulse energy (RMS, averaged from 60 s).
- Measured over 8 hours period after 30 min warm-up when ambient temperature variation is less than ±2 °C.
- Super-Gaussian spatial mode of 6-11th order in near field.
- M2 value of ~5 is standard. Versions with M2 in the range of 20 – 90 can be ordered.
- Beam diameter is measured at signal output at 1/e2 level for Gaussian beams and FWHM level for Super-Gaussian beams.
- Beam pointing stability is evaluated as movement of the beam centroid in the focal plane of a focusing element (RMS, averaged from 60 s).
- Optical pulse jitter with respect to electrical outputs: Trig out > 3.5 V @ 50 Ω.
- System sizes are preliminary and depend on customer lab layout and additional options purchased.
- Longer umbilical with up to 10 m available upon request.
- The laser and auxiliary units must be settled in such a place void of dust and aerosols. It is advisable to operate the laser in air conditioned room, provided that the laser is placed at a distance from air conditioning outlets. The laser should be positioned on a solid worktable. Access from one side should be ensured.
- Voltage fluctuations allowed are +10 % / -15 % from nominal value.
- Power consumption and water supply requirements deviate depending on system configuration.
Note: Laser must be connected to the mains electricity all the time. If there will be no mains electricity for longer that 1 hour then laser (system) needs warm up for a few hours before switching on.
Options
Option | Description | Comment |
---|---|---|
– G | Provides a Gaussian-like beam profile | Pulse energies are typically lower in comparison to standard version by 80 % |
– M20…90 | Provides a flat, smooth beam profile, without hot spots and diffraction rings in the near and medium field | M² > 20 or M² > 90 |
– RLI | Optional Relay Imaging for smooth beam profile | |
– AW | Water-air cooling option | Replaces or supplements Water-to-Water cooling unit. Heat dissipation equals total power consumption |
– N10…N20 | 10 – 20 ns pulse duration | In the range of 2 – 25 ns |
Option | Description | Comment |
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Power supply
Cabinet | Usable height | Height H,mm | Width W, mm | Depth D, mm |
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MR-9 | 9 U | 455.5 (519 1) ) | 553 | 600 |
MR-12 | 12 U | 589 (653 1) ) | 553 | 600 |
MR-16 | 16 U | 768 (832 1) ) | 553 | 600 |
MR-20 | 20 U | 889 (952 1) ) | 553 | 600 |
MR-25 | 25 U | 1167 (1231 1) ) | 553 | 600 |
Cabinet | Usable height | Height H,mm | Width W, mm | Depth D, mm |
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- Full height with wheels.
Performance
Drawings
Publications
Conversion efficiency of a laser-plasma source based on a Xe jet in the vicinity of a wavelength of 11 nm
We optimized the parameters of a laser-produced plasma source based on a solid-state Nd: YAG laser (λ = 1.06 nm, pulse duration 4 ns, energy per pulse up to 500 mJ, repetition rate 10 Hz, lens focus distance 45 mm, maximum power density of laser radiation in focus 9 × 1011 W/cm2) and a double-stream Xe/He gas jet to obtain a maximum of radiation intensity around 11 nm wavelength. It was shown that the key factor determining the ionization composition of the plasma is the jet density. With the decreased density, the ionization composition shifts toward a smaller degree of ionization, which leads to an increase in emission peak intensity around 11 nm. We attribute the dominant spectral feature centred near 11 nm originating from an unidentified 4d-4f transition array in Xe+10…+13 ions. The exact position of the peak and the bandwidth of the emission line were determined. We measured the dependence of the conversion efficiency of laser energy into an EUV in-band energy with a peak at 10.82 nm from the xenon pressure and the distance between the nozzle and the laser focus. The maximum conversion efficiency (CE) into the spectral band of 10–12 nm measured at a distance between the nozzle and the laser beam focus of 0.5 mm was CE = 4.25 ± 0.30%. The conversion efficiencies of the source in-bands of 5 and 12 mirror systems at two wavelengths of 10.8 and 11.2 nm have been evaluated; these efficiencies may be interesting for beyond extreme ultraviolet lithography.
Development and characterization of a laser-plasma soft X-ray source for contact microscopy
In this work, we present a compact laser-produced plasma source of X-rays, developed and characterized for application in soft X-ray contact microscopy (SXCM). The source is based on a double stream gas puff target, irradiated with a commercially available Nd:YAG laser, delivering pulses with energy up to 740 mJ and 4 ns pulse duration at 10 Hz repetition rate. The target is formed by pulsed injection of a stream of high-Z gas (argon) into a cloud of low Z-gas (helium) by using an electromagnetic valve with a double nozzle setup. The source is designed to irradiate specimens, both in vacuum and in helium atmosphere with nanosecond pulses of soft X-rays in the ‘‘water-window” spectral range. The source is capable of delivering a photon fluence of about 1.09 x 103 photon/µm2/pulse at a sample placed in vacuum at a distance of about 20 mm downstream the source. It can also deliver a photon fluence of about 9.31 x 102 – photons/µm2/pulse at a sample placed in a helium atmosphere at the same position. The source design and results of the characterization measurements as well as the optimization of the source are presented and discussed. The source was successfully applied in the preliminary experiments on soft X-ray contact microscopy and images of microstructures and biological specimens with ~80 nm half-pitch spatial resolution, obtained in helium atmosphere, are presented.
XUV generation from the interaction of pico- and nanosecond laser pulses with nanostructured targets
Laser-produced plasmas are intense sources of XUV radiation that can be suitable for different applications such as extreme ultraviolet lithography, beyond extreme ultraviolet lithography and water window imaging. In particular, much work has focused on the use of tin plasmas for extreme ultraviolet lithography at 13.5 nm. We have investigated the spectral behavior of the laser produced plasmas formed on closely packed polystyrene microspheres and porous alumina targets covered by a thin tin layer in the spectral region from 2.5 to 16 nm. Nd:YAG lasers delivering pulses of 170 ps (Ekspla SL312P )and 7 ns (Continuum Surelite) duration were focused onto the nanostructured targets coated with tin. The intensity dependence of the recorded spectra was studied; the conversion efficiency (CE) of laser energy into the emission in the 13.5 nm spectral region was estimated. We have observed an increase in CE using high intensity 170 ps Nd:YAG laser pulses as compared with a 7 ns pulse.
EUV spectra from highly charged terbium ions in optically thin and thick plasmas
We have observed extreme ultraviolet (EUV) spectra from terbium (Tb) ions in optically thin and thick plasmas for a comparative study. The experimental spectra are recorded in optically thin, magnetically confined torus plasmas and dense laser-produced plasmas (LPPs). The main feature of the spectra is quasicontinuum emission with a peak around 6.5-6.6 nm, the bandwidth of which is narrower in the torus plasmas than in the LPPs. A comparison between the two types of spectra also suggests strong opacity effects in the LPPs. A comparison with the calculated line strength distributions gives a qualitative interpretation of the observed spectra.
Enhancement of Laser-Induced Breakdown Spectroscopy (LIBS) Detection Limit Using a Low-Pressure and Short-Pulse Laser-Induced Plasma Process
Laser-induced breakdown spectroscopy (LIBS) technology is an appealing technique compared with many other types of elemental analysis because of the fast response, high sensitivity, real-time, and noncontact features. One of the challenging targets of LIBS is the enhancement of the detection limit. In this study, the detection limit of gas-phase LIBS analysis has been improved by controlling the pressure and laser pulse width. In order to verify this method, low-pressure gas plasma was induced using nanosecond and picosecond lasers. The method was applied to the detection of Hg. The emission intensity ratio of the Hg atom to NO (IHg/ INO) was analyzed to evaluate the LIBS detection limit because the NO emission (interference signal) was formed during the plasma generation and cooling process of N2 and O2 in the air. It was demonstrated that the enhancement of IHg/INO arose by decreasing the pressure to a few kilopascals, and the IHg/INO of the picosecond breakdown was always much higher than that of the nanosecond breakdown at low buffer gas pressure. Enhancement of IHg/INO increased more than 10 times at 700 Pa using picosecond laser with 35 ps pulse width. The detection limit was enhanced to 0.03 ppm (parts per million). We also saw that the spectra from the center and edge parts of plasma showed different features. Comparing the central spectra with the edge spectra, IHg/INO of the edge spectra was higher than that of the central spectra using the picosecond laser breakdown process.